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5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration 18-chip 256M x8 Pieces in Kit 2 Compatibility
M471B5173DB0-YK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM CAS Latency CL11 Pieces in Kit 1 Compatibility
x8 configuration RAM kit from Samsung is for use in DDR2 compatible systems and operates at 800 MT/s with an overall transfer rate of PC2-6400
CT8G4WFD8213 Capacity 8GB (1x 8GB) Brand Crucial Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
Micron 8GB (1x 8GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V 240-pin UDIMM RAM Module Model_iMAC_20_2 5V Technology DDR3L Error CorrectionProduct Overview This 8GB (1x 8GB) DDR3L 1600 MT s RAM module from Micron is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part
