Samsung 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V ECC Registered 240-pin RDIMM RAM Module Processor_I3 2xM470L2923BN0-CB3 Capacity 2GB (2x 1GB)

2xM470L2923BN0-CB3 Capacity 2GB (2x 1GB) Brand Samsung Speed DDR-333 - 333MT/s - PC2700 Voltage 2

M378B5173QH0-YK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1

5V Technology DDR3L Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration 36-chip 512Mx4 Pieces in Kit 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR3 1066 MT/s 240-pin RDIMM RAM kit from Hynix

2xM393A1G40EB1-CRC Capacity 16GB (2x 8GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

Samsung 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V ECC Registered 240-pin RDIMM RAM Module Processor_I3 2xM470L2923BN0-CB3 Capacity 2GB (2x 1GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3 1333 MT s 240 pin RDIMM RAM module from Samsung . This RAM module is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed