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5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL13 Configuration x8 Pieces in Kit 1 Compatibility
CT2K4G3S1067M Capacity 8GB (2x 4GB) Brand Crucial Speed DDR3L-1066 -1066MT/s - 1067MT/s - PC3L-8500 Voltage 1
2xMTA18ASF2G72PDZ-2G3B1 Capacity 32GB (2x 16GB) Brand Micron Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
MT18KSF51272AZ-1G6K1ZF Capacity 4GB (1x 4GB) Brand Micron Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
M378B2873FHS-CH9 Capacity 1GB (1x 1GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
Samsung 16GB (2x 8GB) DDR4-2400 PC4-19200 1.2V SR x4 ECC Registered 288-pin RDIMM RAM Kit Model_iMAC_18_1 5V Technology DDR3L Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR4 2400 MT s 288 pin RDIMM RAM kit from Samsung . This Single rank, x4 configuration RAM kit is for use in DDR4 compatible systems and operates at 2400 MT s with an overall transfer rate of PC4 19200. This RAM kit also operates at a standard voltage of 1. 2V and is designed to
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