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Ships within 48 hours · Estimated delivery Aug 27 - Sep 1
Pay in 4 interest-free payments of $23.50 Learn more
Ships within 48 hours · Estimated delivery Aug 27 - Sep 1
2V with a CAS Latency of CL17
2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Single rank Configuration x4 Pieces in Kit 1
2V Technology DDR4 Profile Very Low Profile Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility
CT8G4RFS4213 Capacity 8GB (1x 8GB) Brand Crucial Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
2xM393A2K43CB1-CRC Capacity 32GB (2x 16GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
Hynix 16GB (2x 8GB) CL16 DDR3L-1600 PC3L-12800 1.35V / 1.5V DR x8 240-pin UDIMM RAM Kit Classification_ram-ddr4-2666-eudimm-8gb-1x-dr 2V with a CAS LatencyProduct Overview This 16GB (2x 8GB) DDR3L 1600 MT s Dual rank, x8 configuration RAM kit from Hynix is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM kit also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL16, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical