Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr2-800-udimm-4gb-1x-dr 2xHYMP125S64CP8-Y5 Capacity 4GB (2x 2GB)

2xHYMP125S64CP8-Y5 Capacity 4GB (2x 2GB) Brand Hynix

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3L 1600 MT/s 240-pin EUDIMM RAM module from Samsung

5V Technology DDR3 Error Correction ECC Signal Processing Load Reduced Form Factor 240-pin LRDIMM Ranks Quad rank Configuration x4 Pieces in Kit 2 Compatibility

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL13 Configuration 1024M x8 Pieces in Kit 1 Compatibility

2V Technology DDR4 Series Original Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Single rank Configuration x4 Pieces in Kit 1 Compatibility

Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr2-800-udimm-4gb-1x-dr 2xHYMP125S64CP8-Y5 Capacity 4GB (2x 2GB)Product Overview This 1GB (1x 1GB) DDR3 1333 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.