Samsung 8GB (1x 8GB) CL15 DDR4-2133 PC4-17000 1.2V 288-pin UDIMM RAM Module Voltage_2.5V HMT125S6AFP8C-G7 Capacity 2GB (1x 2GB)

HMT125S6AFP8C-G7 Capacity 2GB (1x 2GB) Brand Hynix Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3 1600 MT/s 240-pin EUDIMM RAM module from Micron

HMT351U6BFR8C-H9 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 200-pin SODIMM Ranks Dual rank Configuration 16-chip 128M x8 Pieces in Kit 1

This 4GB (2x 2GB) DDR3 1333 MT/s Dual rank RAM kit from Samsung is for use in DDR3 compatible systems and operates at 1333 MT/s with an overall transfer rate of PC3-10600

Samsung 8GB (1x 8GB) CL15 DDR4-2133 PC4-17000 1.2V 288-pin UDIMM RAM Module Voltage_2.5V HMT125S6AFP8C-G7 Capacity 2GB (1x 2GB)Product Overview This 8GB (1x 8GB) DDR4 2133 MT s RAM module from Samsung is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL15, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.