Samsung 512MB (1x 512MB) CL3 DDR2-400 PC2-3200 1.8V SR x16 200-pin SODIMM RAM Module Classification_ram-ddr4-2400-ecc-sodimm-32gb-2x-dr 8V Technology DDR2 Error Correction

8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration x8 Pieces in Kit 2

2xCDG Capacity 4GB (2x 2GB) Brand Hynix Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1

This 16GB (2x 8GB) DDR4 2666 MT/s Single rank

but the effective rate is 1866 megatransfers per second (MT/s) because there are 933 million rising edges per second and 933 million falling edges per second of a clock signal running at 933 MHz

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR4 2133 MT/s 288-pin RDIMM RAM kit from Samsung

Samsung 512MB (1x 512MB) CL3 DDR2-400 PC2-3200 1.8V SR x16 200-pin SODIMM RAM Module Classification_ram-ddr4-2400-ecc-sodimm-32gb-2x-dr 8V Technology DDR2 Error CorrectionProduct Overview This 512MB (1x 512MB) DDR2 400 MT s Single rank, x16 configuration RAM module from Samsung is for use in DDR2 compatible systems and operates at 400 MT s with an overall transfer rate of PC2 3200. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL3, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical