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x8 configuration RAM kit from Samsung is for use in DDR3L compatible systems and operates at 1600 MT/s with an overall transfer rate of PC3L-12800
Why is the speed of this RAM kit shown as 266 MT/s instead of 266 Mhz
HMT41GU7BFR8A-PBT0 Capacity 8GB (1x 8GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1
MT8JSF25664HZ-1G4M1 Capacity 2GB (1x 2GB) Brand Micron Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Single rank Configuration 8-chip 128M x8 Pieces in Kit 2 Compatibility
Samsung 16GB (1x 16GB) CL15 DDR4-2133 PC4-17000 1.2V ECC 260-pin SODIMM RAM Module Type_DDR x8 configuration RAM kit fromProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR4 2133 MT s 260 pin SODIMM RAM module from Samsung . This RAM module is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL15, and is
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