Micron 4GB (1x 4GB) CL7 DDR3L-1066 PC3L-8500 1.35V / 1.5V 204-pin SODIMM RAM Module Classification_ram-ddr-400-udimm-2gb-2x-dr-fm 2V Technology DDR4 Error Correction

2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Single rank Configuration 18-chip 1024Mx4 Pieces in Kit 1 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR 266 MT/s 184-pin RDIMM RAM module from Samsung

5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM CAS Latency CL9 Pieces in Kit 1 Compatibility

5V Technology DDR Error Correction Non-ECC Signal Processing Unbuffered Form Factor 184-pin UDIMM Ranks Dual rank Configuration 16-chip 64Mx8 Pieces in Kit 2 Compatibility

2xM391B1G73QH0-YK0 Capacity 16GB (2x 8GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1

Micron 4GB (1x 4GB) CL7 DDR3L-1066 PC3L-8500 1.35V / 1.5V 204-pin SODIMM RAM Module Classification_ram-ddr-400-udimm-2gb-2x-dr-fm 2V Technology DDR4 Error CorrectionProduct Overview This 4GB (1x 4GB) DDR3L 1066 MT s RAM module from Micron is for use in DDR3L compatible systems and operates at 1066 MT s with an overall transfer rate of PC3L 8500. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL7, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.