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CT25664BA1339 Capacity 2GB (1x 2GB) Brand Crucial Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1
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M393B5273DH0-CK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1
2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Pieces in Kit 2 Compatibility
This 32GB (1x 32GB) DDR4 2666 MT/s Dual rank
Hynix 8GB (2x 4GB) DDR3-1333 PC3-10600 1.5V DR x8 240-pin UDIMM RAM Kit Model_Mac_Mini_6_1 CT25664BA1339 Capacity 2GB (1x 2GB)Product Overview This 8GB (2x 4GB) DDR3 1333 MT s Dual rank, x8 configuration RAM kit from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM kit also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No. 2xHMT351U6BFR8C
