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2V Technology DDR4 Series Original Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Dual rank Configuration x4 Pieces in Kit 1 Compatibility
HMT351R7EFR8C-PBT3 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1
HMT151R7BFR4C-H9D7 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
2xM393A4K40BB2-CTD Capacity 64GB (2x 32GB) Brand Samsung Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1
5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration x8 Pieces in Kit 2
Samsung 8GB (2x 4GB) DDR3L-1066 PC3L-8500 1.35V / 1.5V DR x8 204-pin SODIMM RAM Kit Classification_ram-ddr4-2133-udimm-16gb-1x-dr 2V Technology DDR4 Series OriginalProduct Overview This 8GB (2x 4GB) DDR3L 1066 MT s Dual rank, x8 configuration RAM kit from Samsung is for use in DDR3L compatible systems and operates at 1066 MT s with an overall transfer rate of PC3L 8500. This RAM kit also operates at a standard voltage of 1. 35V 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
