Hynix 1GB (1x 1GB) DDR2-667 PC2-5300 1.8V DR x8 240-pin UDIMM RAM Module Classification_ram-ddr4-2666-lrdimm-64gb-1x-qr 2V Technology DDR4 Error Correction

2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility

HMT351U6EFR8C-PB Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

This 2GB (1x 2GB) DDR3 1333 MT/s Single rank

M393A2G40EB1-CRC Capacity 16GB (1x 16GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR4 2666 MT/s 288-pin RDIMM RAM module from Samsung

Hynix 1GB (1x 1GB) DDR2-667 PC2-5300 1.8V DR x8 240-pin UDIMM RAM Module Classification_ram-ddr4-2666-lrdimm-64gb-1x-qr 2V Technology DDR4 Error CorrectionProduct Overview This 1GB (1x 1GB) DDR2 667 MT s Dual rank, x8 configuration RAM module from Hynix is for use in DDR2 compatible systems and operates at 667 MT s with an overall transfer rate of PC2 5300. This RAM module also operates at a standard voltage of 1. 8V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.