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8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 16-chip 256Mx8 Pieces in Kit 2 Compatibility
M393B1K70QB0-CMA Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3-1866 - 1866MT/s - PC3-14900 Voltage 1
This 512MB (2x 256MB) DDR 266 MT/s Single rank
This 2GB (1x 2GB) DDR3L 1066 MT/s Single rank
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (2x 16GB) DDR4 2400 MT/s 288-pin RDIMM RAM kit from Hynix
Samsung 2GB (2x 1GB) DDR-333 PC2700 2.5V DR x8 200-pin SODIMM RAM Kit Classification_ram-ddr3l-1866-rdimm-8gb-2x-dr 8V Technology DDR2 Error CorrectionProduct Overview This 2GB (2x 1GB) DDR 333 MT s Dual rank, x8 configuration RAM kit from Samsung is for use in DDR compatible systems and operates at 333 MT s with an overall transfer rate of PC2700. This RAM kit also operates at a standard voltage of 2. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No. 2xM470L2923BN0 CB3
