Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1600-udimm-4gb-1x-sr-fm M393B5170FH0-CH9 Capacity 4GB (1x 4GB)

M393B5170FH0-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Single rank Configuration 8-chip 512M x8 Pieces in Kit 1 Compatibility

2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Dual rank Configuration x8 Pieces in Kit 1

5V Technology DDR3L Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Single rank Configuration x4 Pieces in Kit 2 Compatibility

Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1600-udimm-4gb-1x-sr-fm M393B5170FH0-CH9 Capacity 4GB (1x 4GB)Product Overview This 4GB (1x 4GB) DDR3L 1600 MT s RAM module from Hynix is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.