Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr3l-1066-sodimm-2gb-1x-sr-fm HMA41GR7BJR4N-UH Capacity 8GB (1x 8GB)

HMA41GR7BJR4N-UH Capacity 8GB (1x 8GB) Brand Hynix Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

and don't be surprised if you can actually upgrade your Mac with double the amount of RAM that was originally specified by Apple

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR 266 MT/s 184-pin RDIMM RAM module from RamCity

CT16G4DFD8266 Capacity 16GB (1x 16GB) Brand Crucial Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1

2xHMA41GR7BJR4N-UH Capacity 16GB (2x 8GB) Brand Hynix Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr3l-1066-sodimm-2gb-1x-sr-fm HMA41GR7BJR4N-UH Capacity 8GB (1x 8GB)Product Overview This 1GB (1x 1GB) DDR3 1333 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.