Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.35V SR x8 240-pin UDIMM RAM Module Ranks_Dual MT16JSF25664HY-1G1D1 Capacity 2GB (1x 2GB)

MT16JSF25664HY-1G1D1 Capacity 2GB (1x 2GB) Brand Micron Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

there will be some branded RAM available but Ramcity reserves the right to replace or upgrade to equivalent or better components

5V Technology DDR3L Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Single rank Configuration x4 Pieces in Kit 2 Compatibility

but the effective rate is 800 megatransfers per second (MT/s) because there are 400 million rising edges per second and 400 million falling edges per second of a clock signal running at 400 MHz

NT2GC64B88B0NS-CG Capacity 2GB (1x 2GB) Brand Nanya Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.35V SR x8 240-pin UDIMM RAM Module Ranks_Dual MT16JSF25664HY-1G1D1 Capacity 2GB (1x 2GB)Product Overview This 4GB (1x 4GB) DDR3 1600 MT s Single rank, x8 configuration RAM module from Samsung is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 35V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical