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5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Single rank Configuration 8-chip 512Mx8 Pieces in Kit 2 Compatibility
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR 266 MT/s 184-pin RDIMM RAM module from Samsung
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR4 2400 MT/s 288-pin RDIMM RAM module from Samsung
M391B5173BH0-YK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
MTA36ASF4G72PZ-2G3B1 Capacity 32GB (1x 32GB) Brand Micron Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
Nanya 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2400-rdimm-16gb-1x-dr 5V Technology DDR3 Error CorrectionProduct Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Nanya is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
