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Development Kit The Development Kit based on ESP12-X
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Model: 858D + 2
Peak Current: 150±25A
where a voltage difference (Hall voltage) is produced across an electrical conductor
Used 650volt 160Ampare BGM160T65SD Pull out IGBT DP connector Development Kit The Development KitProduct Description: BGM160T65SD is a high performance IGBT (Insulated Gate Bipolar Transistor) with advanced 650V TrenchFS technology, designed for applications that demand high efficiency and reliability. This IGBT features low conduction and switching losses, positive temperature coefficient, and an integrated soft and fast recovery anti parallel diode, making it ideal for use in automotive motor drives. Key Highlights: Voltage rating: 650V Current
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